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  Datasheet File OCR Text:
 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BDY80
DESCRIPTION *Continuous Collector Current-IC= 4A *Collector Power Dissipation: PC= 36W @TC= 25 *Complement to Type BDY82
APPLICATIONS *Designed for general purpose switching and amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCEX VCEO VEBO IC IB
B
PARAMETER Collector-Base Voltage
VALUE 40
UNIT V
Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage Emitter-Base Voltage
Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature
w w
scs .i w
40 35 10 4 2 36 150 -55~175
.cn mi e
V V V A A
PC TJ Tstg
W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 3.5 UNIT /W
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCE(sat) VBE(on) ICEO ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 100mA; IB= 0 IC= 10mA; IE= 0 IE= 10mA; IC= 0 IC= 1A; IB= 0.05A
B
BDY80
MIN 35 40 10
TYP.
MAX
UNIT V V V
1.0 0.9 10 0.2 0.1 240
V V mA mA mA
IC= 0.5A; VCE= 5V VCE= 20V; IB= 0
B
Current Gain-Bandwidth Product
w
C
ww
scs .i
VEB= 5V; IC= 0
VCB= 20V; IE= 0
IC= 0.5A; VCE= 5V IC= 1A; VCE= 5V
.cn mi e
40 20 1
IC= 0.5A; VCE= 10V
MHz
hFE-1 Classifications A 40-80 B 70-140
120-240
isc Websitewww.iscsemi.cn
2


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